bcr133.../SEMH11 ? switching in circuit, inverter, interface circuit, drive circuit ? built in bias resistor ( r 1 = 10 k ? , r 2 = 10 k ? ) ? for 6-pin packages: two (galvanic) internal isolated transistors with good matching in one package bcr133/f/l3 bcr133t/w bcr133s/u SEMH11 eha07184 3 2 1 c e b r 1 r 2 eha07174 6 54 3 2 1 c1 b2 e2 c2 b1 e1 1 r r 2 r 1 r 2 tr1 tr2 type marking pin configuration package bcr133 bcr133f bcr133l3 bcr133s bcr133t bcr133u bcr133w SEMH11 wcs wcs wc wcs wcs wcs wc wc 1=b 1=b 1=b 1=e1 1=b 1=e1 1=b 1=e1 2=e 2=e 2=e 2=b1 2=e 2=b1 2=e 2=b1 3=c 3=c 3=c 3=c2 3=c 3=c2 3=c 3=c2 - - - 4=e2 - 4=e2 - 4=e2 - - - 5=b2 - 5=b2 - 5=b2 - - - 6=c1 - 6=c1 - 6=c1 sot23 tsfp-3 tslp-3-4 sot363 sc75 sc74 sot323 sot666 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com pnp t digital transistor y
maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 emitter-base voltage v ebo 10 input on voltage v i(on) 20 collector current i c 100 ma total power dissipation- bcr133, t s 102c bcr133f, t s 128c bcr133l3, t s 135c bcr133s, t s 115c bcr133t, t s 109c bcr133u, t s 118c bcr133w, t s 124c SEMH11, t s 75c p tot 200 250 250 250 250 250 250 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) bcr133 bcr133f bcr133l3 bcr133s bcr133t bcr133u bcr133w SEMH11 r thjs 240 90 60 140 165 133 105 300 k/w 1 for calculation of r thja please refer to application note thermal resistance bcr133.../SEMH11 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 , i e = 0 v (br)cbo 50 - - collector-base cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 10 v, i c = 0 i ebo - - 0.75 ma dc current gain 1) i c = 5 ma, v ce = 5 v h fe 30 - - - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.8 - 1.5 input on voltage i c = 2 ma, v ce = 0.3 v v i(on) 1 - 2.5 input resistor r 1 7 10 13 k ? resistor ratio r 1 / r 2 0.9 1 1.1 - ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 130 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1 pulse test: t < 300s; d < 2% bcr133.../SEMH11 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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